• DocumentCode
    514000
  • Title

    High Speed Ga0.47 In0.53 As MISFETs Grown by Metal Organic Vapor Phase Epitaxy

  • Author

    Splettstöber, J. ; Schulte, F. ; Trasser, A. ; Schmitz, D. ; Beneking, H.

  • Author_Institution
    Institute of Semiconductor Electronics, Technical University Aachen, Sommerfeldstrasse, D-5100 Aachen, FRG
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    267
  • Lastpage
    270
  • Abstract
    MISFETs with SiO2 insulator have been successfully fabricated on MOVPE grown Ga0.47In0.53As layers on s.i. InP substrate. The devices show a very high extrinsic transconductance of 250 mS/mm and 300 mS/mm for a gate length of 3 ¿m and 1.5 ¿m, respectively, The current gain cutoff frequency is 6 GHz and 16 GHz for a gate length of 3 um and 1,5 um, respectively. A corresponding response time of 130 ps and 70 ps is measured. Fabricated inverters in p- GaInAs show a voltage amplification of -7 for a supply bias of 5 V.
  • Keywords
    Cutoff frequency; Delay; Epitaxial growth; Epitaxial layers; Indium phosphide; Insulation; Inverters; MISFETs; Time measurement; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514000