Title :
Ion-beam Mixed MoSi2 Layers: Formation and Contact Properties
Author :
Dehm, C. ; Valyi, G. ; Gyulai, J. ; Ryssel, H.
Author_Institution :
Fraunhofer-Arbeitsgruppe fÿr Integrierte Schaltungen, Abteilung fÿr Bauelementetechnologie, ArtilleriestraÃ\x9fe 12, 8520 Erlangen, FRG
Abstract :
n+p-diodes with high conductivity MoSi2-contacts were fabricated using self-aligned silicide technology and ion-beam mixing for silicidation. For optimizing contact properties, different ion-beam mixing processes were compared. The first mixing process investigated was a conventional one, using arsenic ions for silicide formation and doping of the underlying silicon substrate. After mixing, rapid thermal annealing was performed in a N2 ambient to form stoichiometric MoSi2 layers. The second ion-beam mixing process included a sequence of implantations: Silicon ions were used to cause mixing between the Mo-film and the underlying substrate. Rapid thermal annealing in N2 ambient for silicidation was followed by a further silicon implantation to amorphize silicon substrate before junction doping by arsenic ions was performed. Electrical measurements were used to determine contact properties.
Keywords :
Doping; Electric breakdown; Rapid thermal annealing; Rapid thermal processing; Silicidation; Silicides; Silicon; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany