Title :
An Investigation into the Parasitic Effects Affecting the Operation of HEMT-based ICs
Author :
Dumas, J.M. ; Mottet, S. ; Belhadj, A. ; Christou, A. ; Audren, P. ; Kiriakidis, G.
Author_Institution :
Centre National d´´Etudes des Télécommunications, BP 40, 22300 Lannion, France
Abstract :
A study of the parasitic effects pentalizing the operation of two-dimensional electron gas field effect transistors (HEMTs) has been carried-out. In this paper, we present the results - experimental characterizations together with modellinig - obtained for two major process-dependent parasitics: kink effect and beckgatinig effect.
Keywords :
Buffer layers; Doping; Electrons; FETs; Gallium arsenide; Numerical models; Paper technology; Semiconductor process modeling; Threshold voltage; Thyristors;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
