DocumentCode :
514003
Title :
A Study of Ultra Shallow Junctions by Diffusion from Self-aligned Silicides
Author :
Jiang, H. ; Osburn, C.M. ; Xiao, Z-G. ; Smith, P. ; McGuire, G. ; Rozgonyi, G.A.
Author_Institution :
Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911, USA; The Royal Institute of Technology, Electrum, Solid State Electronics, S-16428, Kista, Sweden
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
241
Lastpage :
247
Keywords :
Annealing; Boron; Electric variables measurement; Loss measurement; Materials science and technology; Silicides; Silicon; Thermal engineering; Thermal resistance; Thermal stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436620
Link To Document :
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