Dopant Activation and Defect Annihilation of Heavily Doped Arsenic Implanted Silicon Layers

Author

Said, J. ; Jaouen, H. ; Ghibaudo, G. ; Stoemenos, I. ; Zaumseil, P.

Author_Institution

Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, ENSERG, 23 Rue des Martyrs, B.P. 257, 38016 Grenoble Cedex, France

fYear

1989

fDate

11-14 Sept. 1989

Firstpage

225

Lastpage

228

Keywords

Amorphous materials; Annealing; Conductivity; Impurities; Lattices; Silicon; Solids; Surface resistance; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1989. ESSDERC '89. 19th European

Conference_Location

Berlin, Germany

Print_ISBN

0387510001

Type

Filename

5436626

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