Title :
Two-dimensional Aspects of Ion Enhanced Reactive Etching of Silicon with SF6
Author_Institution :
CNET/CNS, chemin du Vieux-Chene, BP98, 38243 Meylan CEDEX
Abstract :
A model for plasma silicon etching by SF6 is presented; based on the work of Petit-Pelletier, it has been implemented in a simulator, so as to explain two-dimensional effects. It is shown how this model, with its very simple assumptions on fluxes, allow a variety of observed profiles to be simulated.
Keywords :
Analytical models; Equations; Etching; Plasma applications; Plasma measurements; Plasma simulation; Shape measurement; Silicon; Solid modeling; Sulfur hexafluoride;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
