Title :
The Modeling and Simulation of Reactive Ion Etching Rate Using Statistical Method
Author :
Feng, Xiangmmg ; Ruan, Gang
Author_Institution :
Microelec¿tronics Institute, Fudan University, Shanghai, P.R.China
Abstract :
A method to obtain experiential formula of reactive ion etching (RIE) rate based on statistical mathematics combined with few experiments is presented, The precision of the model is 5% for CF4/O2 etching SiO2 and SF6/O2 etching P-doped poly-Si. The model is analytical and especially suitable for process simulation.
Keywords :
Analytical models; Chemical analysis; Cost function; Dry etching; Mathematical model; Mathematics; Microelectronics; Predictive models; Statistical analysis; Testing;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
