Title :
Trends in Heterojunction Silicon Bipolar Transistors
Author :
Mertens, R. ; Nijs, J. ; Symons, J. ; Baert, K. ; Ghannam, M.
Author_Institution :
Interuniversity Microelectronics Center (IMEC), Kapeldreef 75, B-3030 Leuven, Belgium
Abstract :
Different types of bipolar transistor emitters are described. Epitaxial emitters can be achieved by solid phase epitaxial regrowth of polysilicon (at T ≫ 850°C) and recently by glow discharge deposition at T = 250°C and recrystallization (at T = 700°C). Wide band gap emitters and narrow bandgap bases result in very high emitter efficiency which has to be traded-off with emitter and base series resistances.
Keywords :
Bipolar transistors; Contact resistance; Crystallization; Heterojunctions; Impurities; Rapid thermal annealing; Reproducibility of results; Silicon; Substrates; Very large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
