Title :
Control of the Si3N4-InGaAs Interfaces by Constant Capacnitance Transients
Author :
Lopez-Villegas, J.M. ; Samitier, J. ; Morante, J.R. ; Anton, J. ; Boher, P. ; Renaud, M.
Author_Institution :
C?tedra d´´Electr?nica. Fac. F?sica. Universitat de Barcelona, Diagonal 645-647. 08028 Barcelona
Abstract :
An experimental technique to control the defects distribution in Si3N4,-In0.53Ga0.47As strained interfaces is presented on the basis of the analysis of the constant capacitance transients. This method allows to study the time kinetics in a wide range from 10¿2s up to 103s. The results indicate that the behaviour of the slow interface states involves other mechanisms than a simple direct tunnel, like a charge transfer by hopping.
Keywords :
Capacitance; Charge transfer; Dielectrics and electrical insulation; III-V semiconductor materials; Indium gallium arsenide; Interface states; Kinetic theory; Passivation; Strain control; Transient analysis;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
