• DocumentCode
    514019
  • Title

    Control of the Si3N4-InGaAs Interfaces by Constant Capacnitance Transients

  • Author

    Lopez-Villegas, J.M. ; Samitier, J. ; Morante, J.R. ; Anton, J. ; Boher, P. ; Renaud, M.

  • Author_Institution
    C?tedra d´´Electr?nica. Fac. F?sica. Universitat de Barcelona, Diagonal 645-647. 08028 Barcelona
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    186
  • Lastpage
    189
  • Abstract
    An experimental technique to control the defects distribution in Si3N4,-In0.53Ga0.47As strained interfaces is presented on the basis of the analysis of the constant capacitance transients. This method allows to study the time kinetics in a wide range from 10¿2s up to 103s. The results indicate that the behaviour of the slow interface states involves other mechanisms than a simple direct tunnel, like a charge transfer by hopping.
  • Keywords
    Capacitance; Charge transfer; Dielectrics and electrical insulation; III-V semiconductor materials; Indium gallium arsenide; Interface states; Kinetic theory; Passivation; Strain control; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514019