DocumentCode :
514020
Title :
A Monte Carlo Approach to the Study of the Drift-Diffusion Transport Model
Author :
Mantilli, Cinzia ; Venturi, Franco ; Riccò, Bruno ; Sangiorgi, Enrico
Author_Institution :
Department of Electronics, University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
173
Lastpage :
176
Abstract :
In this work, the Monte-Carlo simulation is used as a tool to investigate the field dependence of electron mobility and velocity saturation in MOSFETs. A simple, analytical model, in good agreement with experimental results as well as simulations, is studied from straightforward physical considerations.
Keywords :
Electron emission; Electron mobility; Electron optics; Light scattering; MOSFETs; Monte Carlo methods; Optical saturation; Optical scattering; Phonons; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436637
Link To Document :
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