DocumentCode
514021
Title
Short-time Diffusion of Zinc into InP and InGaAsP from Spin-on Films
Author
Schade, U. ; Enders, P. ; Kuhn, G. ; Unger, B. ; Vogel, K.
Author_Institution
Central Institute of Optics and Spectroscopy, Berlin, CDR
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
177
Lastpage
180
Abstract
Zn-containing sols are available for short-time diffusion of Zn into InP and InGaAsP, It is shown that the net acceptor concentration depends on the temperature cycle due to outdiffusion of intertstiaL Zn. In SI InP interstitial Zn acts as single-charged donor. Short-time diffusion is able to produce p+ -regions in InGaAsP emitting at 1.3 ¿m.
Keywords
Chemistry; Cooling; Heat treatment; Indium phosphide; Optical films; Semiconductor films; Substrates; Surface treatment; Temperature; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436638
Link To Document