Title :
Combination of LOCOS and BOX Isolation for Submicron CMOS Technology
Author :
Zeller, Ch. ; Stelz, F X
Author_Institution :
Siemens AG, Otto-Hahn Ring 6, 8000 Munchen 83, West Germany
Abstract :
A new isolation method for submicron CMOS technology is presented, which combines the advantages of LOCOS and BOX isolation using one photolithographic step only. The technique is independent of circuit layout and the minimum isolation width is limited only by photolithographic resolution.
Keywords :
Anisotropic magnetoresistance; Beak; Birds; CMOS technology; Circuits; Etching; Isolation technology; Oxidation; Silicon; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
