DocumentCode
514033
Title
Porous Anodised Silicon for Full Dielectric Isolation: The Development of an n/n+/n Device Route
Author
Brunmhead, D ; Castledine, J.G. ; Keen, J.M. ; Cole, J.M. ; Earwaker, L C ; Farr, J P C ; Grzesczyk, P E ; Ecuyer, J.L. ; Loretto, M ; Sturland, I M
Author_Institution
Royal Signals and Radar Establishment, St Andrews Road, Great Malvern, Worcs WR14 3PS, UK
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
391
Lastpage
394
Abstract
The n/n+/n route to porous silicon has been used to produce fully dielectrically isolated silicon islands. Results are presented to show that doping of the island with residual n+ material can be avoided and that Lhe silicon is of high crystalline perfection. The technique is shown to avoid the limitations of the original p-n technique and to be extremely promising for SOI Device applications.
Keywords
Crystallization; Crystallography; Dielectric devices; Doping; Oxidation; Radar; Silicon; Strips; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436658
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