Title :
MESFET Analysis with MINIMOS
Author :
Lindorfer, Ph. ; Selberherr, Siegfried
Author_Institution :
Institut fÿr Mikroelektronik, Technische Universitÿt Wien, GuÃ\x9fhausstraÃ\x9fe 27-29, A-1040 WIEN, AUSTRIA
Abstract :
This paper presents the implementation of models allowint the simulation of silicon as well as GaAs MESFETs with MINIMOS 5- an integrated 2D and 3D device simulator for silicon MOSFETs. Models for the Schottky contact, device geometries and first results are shown.
Keywords :
Analytical models; Frequency; Gallium arsenide; MESFETs; MOSFETs; Poisson equations; Schottky barriers; Silicon; Voltage; Winches;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
