Title :
Investigation on P-buried GaAs MESFETs
Author :
Shi, Chang-Xin ; Li, Xiao-Ming ; Xin, Shang-Beng
Author_Institution :
Institute of Microelectronic Technigue, Shanghai Jiao Tong University, Shanghai 200030, CHINA
Abstract :
Alp-buried GaAs MESFET (PB-GaAsMESFET) has been fabricated by means of implanting Be into semi-insultaing GaAs substrates to form a p-type buried layer under the channel-active layer. The experimental results show that PB-GaAs MESFET not only improve the uniformity of the pinch-off voltage but increase the transconductances and reduce the effects of back gate as well. The theoretical analysis and process design of the PB-GaAS MESFET are also presented.
Keywords :
Gallium arsenide; Helium; Identity-based encryption; Large Hadron Collider; MESFETs; Tiles;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
