Title :
Enhanced Process Window for BPSG Flow in a Salicide Process Using a LPCVD Nitride Cap Layer
Author :
de Vries, R.G.M.Penning ; Osinski, K.
Author_Institution :
Advanced MOS Process Development Group, Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
Abstract :
Optimisation of BPSG flow and TiSi2 degradation in a 1.0 ¿m CMOS process is studied. It is shown that a nitride cap layer allows to flow the BPSG in a steam ambient without excessive degradation of the silicide. A simple model for the degradation of the TiSi2 sheet resistance is derived. The observed degradation of the TiSi2 film is independent of the substrate, but is a function of the film thickness.
Keywords :
CMOS process; Degradation; Laboratories; Performance analysis; Planarization; Rapid thermal annealing; Risk analysis; Semiconductor films; Temperature dependence; Thermal resistance;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
