Title :
Novel Submicron Processes for Shallow p+n-Junctions
Author :
Mader, L. ; Orlowski, Marius ; Weitzel, I.
Author_Institution :
Siemens AG, Research and Development Laboratories, Otto-Hahn-Ring 6, 8000 Mÿnchen 83, FRG
Abstract :
Shallow p+-n junctions have been achieved employing substrate prcamorphization with gallium implantation prior to high dose boron or BF2 implantation. The resulting p+-n junctions are investigated and compared with junctions obtained with conventional techniques. The impact of different amorphization procedures on boron diffusivity is explained by analytical models.
Keywords :
Boron; CMOS process; CMOS technology; Crystallization; Furnaces; Gallium; Implants; Rapid thermal annealing; Substrates; Temperature dependence;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
