The Use of Boron Doped Polysilicon In PMOS Devices

Problems, such as short channel effecs, arise when the buried channel PMOS device is scaled down to submicron dimensions. These can be alleviated by using boron doped polysilicon as gate material which results in a surface channel device, The effects of p-type polysilicon on capacitor and transistor parameters are presented. It is shown that, despite capacitor gate oxide instabilities, the boron doped polysilicon transistors are more hot-carrier resistant.