• DocumentCode
    514050
  • Title

    Deep Submicron Dry Etching

  • Author

    Laporte, Ph.

  • Author_Institution
    LETI, a division of Commisariat á l´´Energie Atomique, CENG 85X-38041 GRENOBLE CEDEX FRANCE
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    13
  • Lastpage
    22
  • Keywords
    Anisotropic magnetoresistance; Costs; Dry etching; Inductors; Laboratories; Manufacturing; Plasma applications; Plasma devices; Plasma materials processing; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436678