Title :
Modelling of Insulated Gate Bipolar Transistors with Buffer-Layers
Author :
Brunner, H. ; Kapels, H. ; Porst, A. ; Silber, D.
Author_Institution :
SIEMENS AG, ZFE T KM 2, Otto-Hahn-Ring 6, 81739 Mÿnchen, Germany
Abstract :
Quantitatively correct simulations of buffer IGBTs demand adjustments of channel and of concentration dependent SRH parameters (Scharfetter relation). In particular the Scharfetter parameter required for quantitative agreement differs considerably from those used by previous authors. A parameter set for successful simulation of very different structures has been obtained using test devices.
Keywords :
Charge carrier processes; Doping profiles; Insulated gate bipolar transistors; Insulation; Medical simulation; Platinum; Semiconductor process modeling; Standards development; Testing; Velocity measurement;
Conference_Titel :
Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
Conference_Location :
Bologna, Italy
