Title :
Volume Inversion in SOI MOSFETs with Double Gate Control: A New Transistor Operation with Greatly Enhanced Performance
Author :
Balestra, F. ; Cristoloveanu, S. ; Benachir, M. ; Brini, J. ; Elewa, T.
Author_Institution :
Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs (UA-CNRS), ENSERG/INPG, 23 Av. des Martyrs, 38031 Grenoble, FRANCE
Abstract :
Silicon-On-Insulator transistors are used with a double gate control. By this way, a fully inverted silicon film (interface and film volume) is obtained. This method allows us to greatly enhance the device performance, in particular the subthreshold swing, transconductance and drain current. Simulated and experimental characteristics on SIMOX structures are analysed to study the new device.
Keywords :
Home computing; Intersymbol interference; Isolation technology; MOSFETs; Parasitic capacitance; Poisson equations; Semiconductor films; Silicon on insulator technology; Transconductance; Very large scale integration;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
