DocumentCode
514054
Title
Volume Inversion in SOI MOSFETs with Double Gate Control: A New Transistor Operation with Greatly Enhanced Performance
Author
Balestra, F. ; Cristoloveanu, S. ; Benachir, M. ; Brini, J. ; Elewa, T.
Author_Institution
Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs (UA-CNRS), ENSERG/INPG, 23 Av. des Martyrs, 38031 Grenoble, FRANCE
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
399
Lastpage
402
Abstract
Silicon-On-Insulator transistors are used with a double gate control. By this way, a fully inverted silicon film (interface and film volume) is obtained. This method allows us to greatly enhance the device performance, in particular the subthreshold swing, transconductance and drain current. Simulated and experimental characteristics on SIMOX structures are analysed to study the new device.
Keywords
Home computing; Intersymbol interference; Isolation technology; MOSFETs; Parasitic capacitance; Poisson equations; Semiconductor films; Silicon on insulator technology; Transconductance; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436683
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