• DocumentCode
    514055
  • Title

    Impact of S/D-Preamorphization on CMOS Performance

  • Author

    Mazuré, C. ; Winnerl, J. ; Neppl, F.

  • Author_Institution
    Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, FRG
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    585
  • Lastpage
    588
  • Abstract
    Substrate amorphization prior to Source/Drain implantation is used for shallow junction fabrication. The impact of preamorphization on CMOS Performance is investigated. Results for a 1.5¿m double well CMOS Technology with phosphorus and boron drains are presented. The influence of preamorphization on the transistor characteristics, speed and latch-up hardness is discussed.
  • Keywords
    Annealing; Boron; CMOS technology; Fabrication; ISO; Implants; Microelectronics; P-n junctions; Research and development; Surface resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436687
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514055