Title :
Gettering and Deep States in P-Type Czochralski Silicon
Author :
Jha, N. ; Peaker, A.R. ; Keefe-Fraundorf, G.
Author_Institution :
Department of Electrical Engineering and Electronics, Centre for Electronic Materials, University of Manchester, Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, England; B.P. Research Centre, Sunbury on Thames. U.K
Abstract :
This paper reports deep state measurements on boron doped Czochralski silicon. A comparison is made between four gettering technologies after the slices have been subjected to oxidation cycles in steam at 1100°C for two hours. An analysis of the results is made using a diffusion model of gettering.
Keywords :
Boron; Chemical analysis; Gain measurement; Gettering; Impurities; Oxidation; Pollution measurement; Silicon; Surface treatment; Time measurement;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
