• DocumentCode
    514060
  • Title

    A Novel Realistic Model for Threshold Voltage of Short Channel MOSFETs

  • Author

    Orlowski, M. ; Werner, Ch.

  • Author_Institution
    SIEMENS Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, 8000 Mÿnchen 83, FRG
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    547
  • Lastpage
    550
  • Abstract
    The proposed model gives more realistic account of the physics of short channel behavior than its predecessors allowing fits to experimental data and simulated results without resorting to unrealistic values for clearly defined parameters. The most distinct and new feature of this model is the prediction of the onset of the threshold voltage reduction at a critical range of channel lengths. The model is formulated in terms of simple analytic formulae.
  • Keywords
    Doping; Electrodes; Geometry; MOSFETs; Microelectronics; Physics; Predictive models; Research and development; Semiconductor process modeling; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436695
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514060