Title :
GaAs-Device Life-Time Improvements by New Results on Metal-Electrode Fabrication
Author :
Gupta, R.P. ; Hartnagel, H.L. ; Kretschmer, K.-H. ; Schutz, R. ; Würfl, J.
Author_Institution :
Institut fÿr Hochfrequenztechnik, Technische Hochschule Darmstadt, MerckstraÃ\x9fe 25, 6loo Darmstadt, West Germany; Central Electronics Engineering Research Institute, Pilani (Rajasthan) 333031, India
Abstract :
The development of an Au-WSi2-Ge ohmic contact on GaAs for highly stable devices is reported. Coplanar interelectrode material migration is minimized by a technology leading to oxygen-poor GaAs surfaces.
Keywords :
Annealing; Electrodes; Etching; FETs; Fabrication; Gallium arsenide; Gold; Ohmic contacts; Surface treatment; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
