All-Silicon Phase-Amplitude Integrated Optical Modulator based on a BMFET Structure

In this paper we analyze a novel silicon optical amplitude-phase modulator integrated into a SOI (Silicon On Insulator) optical waveguide and based on a three terminal electronic structure. It exploits the plasma optic effect to produce the desired refractive index and absorption coefficient variations. We report the results for both the amplitude and phase modulator, paying attention to the dynamic behavior. In particular a modulation depth of 20 % with a rise time of 5.6 ns is achieved. Furthermore, as a phase modulator, the device exhibits a very high figure of merit, predicting an induced phase shift per volt per millimeter of about 215°, and a rise time smaller than 3.0 ns.