Development of CMOS Compatible P-Channel Junction-Field-Effect Transistors for Very Low Noise Applications

CMOS compatible Junction-Field-Effect-Transistors (JFETs) for very low noise applications with different transistor layouts have been developed and tested. The l/f-corner frequency is below 1 kHz. An equivalent noise voltage density of 1 nV/HZ at 100 kHz was achieved. The transistors were applied as discrete elements in the inputstage of a transimpedance amplifier for plumbicon tubes. A total signal to noise ratio of 55 dB has been measured.