Title :
Leakage Currents in Low Temperature Processed Polycrystalline-Si TFTs
Author :
Brotherton, S.D. ; Young, N.D. ; Gill, A
Author_Institution :
Philips Research Laboratories, Redhill, Surrey, U.K.
Abstract :
The influence of plasma hydrogenation on the leakage current of n-channel poly-Si TFTs has been examined. With low temperature processed devices, the major effect has been the suppression of gate controlled hole currents as a result of the increase in carrier generation lifetime. This has also resulted in a complementary increase in optical sensitivity.
Keywords :
Dielectrics; Grain boundaries; Leakage current; Plasma devices; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Plasma temperature; Temperature measurement; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
