Verigrid-FCTh Switching 10A at 1000V

New field controlled thyristors (FCTh) have been realized by a recessed gate technique (VERIGRID), which exhibit a higher aspect ratio of the control fingers than devices produced so far. Thus a static blocking gain in excess of 500 could be achieved, and more than 10A (125A/cm²) were switched off snubberless at 1000V and inductive load. Furthermore the doping of the finger sidewalls turned out to be very important for the on state: with high doping a hole bypass is created, and long channel JFET saturation is observed instead of a low resistance like that of a pin diode.