Simulation of Stressed N- and P-Channel Mosfet´s: Fixed Oxide Charges and Fast Interface States

MOSFET´s stressed at high drain voltages show shifts in the device characteristics. We study the effect of the stress-induced damaged region on the device characteristics for conventional n- and p-channel devices. We give a consistent description of degradation effects on the drain current in the subthreshold and the pentode region of the MOSFET as well as on the substrate current. In that way it is possible to decide between several models which might be appealing in one or the other regime.