Monitoring the Impurity Profile and Thickness of Semiconductor Layers with the Channel Conductance of Buried Channel Field Effect Devices

A new method to determine the width of depleted layers and the impurity profile in semiconductor materials is presented. The method employs the channel conductance of buried channel field effect devices (with junction, oxide or Schottky-barrier gate isolation) and can be performed with DC measurements only. A concise derivation of the expressions for the impurity concentration and the depletion layer width dependent on the channel conductance is given. Experimental results on both measured and synthetic data are provided.