• DocumentCode
    514088
  • Title

    Scanning of the Entire Energy Gap at the SI-SiO2 Interface in Mosfets using the Conductance Technique: Comparison with Dynamic Transconductance Measurements

  • Author

    Haddara, Hisham ; El-Sayed, Mohamed

  • Author_Institution
    Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, ENSERG, 23 rue des Martyrs, 38031 Grenoble Cedex, France.
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    695
  • Lastpage
    698
  • Abstract
    A new and accurate approach to ac conductance measurements on MOSFETs is presented. It is shown that the conductance technique can be used to study interface trap properties in the entire silicon band-gap by direct measurement on a single MOSFET. Moreover, the validity of the dynamic transcnductance method is assessed by comparing its results with those obtained from conductance measurements on the same devices.
  • Keywords
    Electrical resistance measurement; Energy measurement; Equivalent circuits; Frequency measurement; Length measurement; MOSFETs; Photonic band gap; Silicon; Time measurement; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436735
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514088