Title :
Scanning of the Entire Energy Gap at the SI-SiO2 Interface in Mosfets using the Conductance Technique: Comparison with Dynamic Transconductance Measurements
Author :
Haddara, Hisham ; El-Sayed, Mohamed
Author_Institution :
Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, ENSERG, 23 rue des Martyrs, 38031 Grenoble Cedex, France.
Abstract :
A new and accurate approach to ac conductance measurements on MOSFETs is presented. It is shown that the conductance technique can be used to study interface trap properties in the entire silicon band-gap by direct measurement on a single MOSFET. Moreover, the validity of the dynamic transcnductance method is assessed by comparing its results with those obtained from conductance measurements on the same devices.
Keywords :
Electrical resistance measurement; Energy measurement; Equivalent circuits; Frequency measurement; Length measurement; MOSFETs; Photonic band gap; Silicon; Time measurement; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
