Title :
A high performance P-channel EPROM cell
Author :
Cantarelli, D. ; Maurelli, A. ; Baldi, L.
Author_Institution :
SGS Microelettronica S. p. A., via C. Olivetti 2 -20041 Agrate Brianza (MI)-Italy
Abstract :
Recent results show higher gate current in P-channel devices than in IV-channel ones under the same bias conditions. By this reason, we produced a P-chiannel EPROM cell, making use of a standard N-channel cell layout. We present a complete electrical charactcrization and point out some advantages which make P-channel EPROM cells very promising, especially for future CMOS applications.
Keywords :
Annealing; EPROM; Epitaxial growth; Geometry; Semiconductor films; Silicon; Substrates; Telecommunications; Temperature; Thickness control;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
