DocumentCode :
514093
Title :
The Influence of Lifetime on the Lateral Pasitic Bipolar Transistors in CMOS
Author :
Deferm, L. ; Romaen, G. ; Claeys, C. ; Mertens, R.
Author_Institution :
I M. E. C., Kapeldreef, 75 B-3030 Leuven - Belgium
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
775
Lastpage :
778
Abstract :
The electrical characteristics of lateral bipolar transistors are very important in predicting latch-up. An increase of the current amplification factor is noticed when the high current level injection regime is reached, but this only for devices with a relative low base carrier lifetime. For low minority carrier lifetimes in the base the beta versus collector curve will show a bump.
Keywords :
Bipolar transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436741
Link To Document :
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