Title :
Simulations of aging effects in MOS transistors
Author :
Bergonzoni, C. ; Doyle, B.
Author_Institution :
SGS Microelettronica, via C.Olivetti 2, 20041 Agrate Brianza (MT)-Italy
Keywords :
Aging; Analytical models; Degradation; Lead compounds; MOSFETs; Region 1; Region 2; Solid modeling; Stress; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
