DocumentCode :
514109
Title :
A New SCR Parameter Extraction Method to Help Design for Reliability in CMOS Circuits
Author :
Erdelyi, K. ; Knapp, G.
Author_Institution :
Research Institute for Technical Physics of the Hungarian Academy of Sciences, H-1325 Budapest, P. O. Box 76. Hungary
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
787
Lastpage :
790
Keywords :
Bipolar transistors; Circuit simulation; Design methodology; Equations; Integrated circuit reliability; Noise measurement; Parameter extraction; Physics; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436758
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=514109
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