مرکز منطقه ای اطلاع رساني علوم و فناوري - An Advanced Bipolar Process using Trench Isolation and Polysilicon Emitter for High Speed VLSI

DocumentCode :

514123

Title :

An Advanced Bipolar Process using Trench Isolation and Polysilicon Emitter for High Speed VLSI

Author :

Roche, N. ; Borel, G. ; Imbert, J.L. ; Thomas, D. ; Fritsch, L. ; Celi, D. ; Hunt, P. ; Hefner, A.

Author_Institution :

THOMSON SEMICONDUCTEURS BP 200 38522 Saint-EGREVE Cedex FRANCE

fYear :

1987

fDate :

14-17 Sept. 1987

Firstpage :

507

Lastpage :

510

Keywords :

Boron; Dielectrics; Electrodes; Etching; Fabrication; Oxidation; Resists; Silicon; Substrates; Very large scale integration;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid State Device Research Conference, 1987. ESSDERC '87. 17th European

Conference_Location :

Bologna, Italy

Print_ISBN :

0444704779

Type :

conf

Filename :

5436775

Link To Document :