DocumentCode
514125
Title
The effect of device geometry on IGFET characteristics
Author
Serack, J.A. ; Walton, A.J. ; Robertson, J.M.
Author_Institution
Ediniburgh MiNcrofabrication Facility, University of Edinburgh, Edinburgh, Scotland.
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
915
Lastpage
918
Abstract
A novel technique for the fabrication of asymmetrical incompletely gated transistors is described. The subthreshold characteristics of transistors fabricated using the technique are measured and conclusions concerning the mechanisms responsible for the observations are presented.
Keywords
Aluminum; Capacitance; Circuits; Electric variables; Etching; Fabrication; Geometry; Implants; Marine vehicles; Process design;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436779
Link To Document