DocumentCode :
514126
Title :
Carrier Multiplication and Avalanche Breakdown in Self-Aligned Bipolar Transistors
Author :
Reisch, M.
Author_Institution :
SIEMENS AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Muenchen 83, FRG
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
901
Lastpage :
904
Keywords :
Avalanche breakdown; Bipolar transistors; Breakdown voltage; Diodes; Doping; Electron emission; Extraterrestrial measurements; Impact ionization; Measurement errors; Performance evaluation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436780
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=514126
بازگشت