Title :
Physical modelling problems of ultrafast silicon bipolar transistors
Author :
de Graaff, H.C. ; Hurkx, G.A.M.
Author_Institution :
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
Keywords :
Bipolar transistors; Capacitance; Current measurement; Cutoff frequency; Doping; Electron mobility; Hot carriers; Laboratories; Photonic band gap; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
