• DocumentCode
    514136
  • Title

    The Physics of Silicide Base Transistors

  • Author

    Rosencher, E. ; Avitaya, F. Arnaud D ; Badoz, P.A. ; Glastre, G. ; Vincent, G.

  • Author_Institution
    Centre National d´´Etucdes des T?l?communications - BP : 98 - Chemin du Vieux Ch?ne - 38243 MEYLAN CEDEX - FRANCE
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    931
  • Lastpage
    939
  • Abstract
    Epitaxia Si/CoSi2/Si structures can be grown under ultra-high vacuum conditios. The metallic CoSi2 films can be extremely thin typically between 1 nm and 2O nm. The electrical properties of these heterostructures are presented, mainly the transport of electrons in the metallic films parallel to the interfaces and the transfer of electrons through the metal film. The influence of pinholes in the CoSi2 layers will be discussed.
  • Keywords
    Lattices; Physics; Scanning electron microscopy; Silicides; Silicon; Surface contamination; Surface morphology; Temperature; Transmission electron microscopy; Vacuum technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514136