Title :
Rapid Thermal Processing of Polysilicon Emitter Bipolar Transistors in a Combined CMOS/Bipolar Process
Author :
Grant, Lindsay A. ; McNeill, D.W. ; Blomley, P.F.
Author_Institution :
STC Technology, London Road, Harlow, CM17 9NA, UK
Abstract :
The effect of RTA time on the emitter profiles and base current of polysilicon emitter bipolar transistors has been studied. Experimental results show increasing base current with anneal time. The contact saturation current density Jos has been extracted for a device with polysilicon doping level of 3×1020 cm¿3 and a 45 second 1100°C RTA.
Keywords :
Bipolar transistors; CMOS process; Furnaces; Grain boundaries; Oxidation; Predictive models; Rapid thermal annealing; Rapid thermal processing; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
