Real-Space Transfer in Heterojunction FET´s : Monte-Carlo Simulation and Analytical Model

We present the results of a Monte-Carlo simulation of the NERFET, a field effect transistor where the realspace transfer of channel electrons over a heterojunction barrier gives rise to a negative differential resistance (NDR) effect on drain current. An analytical expression of the real-space current is built upon our simulation results. By this way, we construct an analytical model of the NERFET which shows go agreement with Monte-Carlo results without the need of adjusting any parameter.