DocumentCode
514153
Title
Avalanche and Tunneling Breakdown Mechanisms in HEMT´s Power Structures
Author
Crosnier, Y. ; Temcamani, F. ; Lippens, D. ; Salmer, G.
Author_Institution
Centre Hyperfréquences et Semiconducteurs, CNRS-UA 287, Université des Sciences et Techniques de Lille Flandres Artois, F-59655 Villeneuve-d´´Ascq Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
The present paper reports a study on the breakdown phenomenon in AlGaAs/GaAs power HEMT´S. It uses, on one hand, experimental results carried out on various test devices and, on the other hand, modeling taking into account either ionization or tunneling effects. Such an approach gives a new understanding on the respective roles of these two effects in the breakdown occurrence and allows to define design rules.
Keywords
Avalanche breakdown; Breakdown voltage; Doping; Gallium arsenide; HEMTs; Ionization; MODFETs; Neodymium; Testing; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436974
Link To Document