DocumentCode
514154
Title
An Analysis of the Advantages of a Box Isolation Technique
Author
Figueras, E. ; Hazebrouck, S. ; van de Wiele, F.
Author_Institution
Centro Nacional de Microelectrónica, CSIC-UAB, Universitat Autònoma de Barcelona, SP-08193 Bellaterra, Barcelona, Spain
fYear
1988
fDate
13-16 Sept. 1988
Abstract
In this paper we present a BOX process and the electrical results obtained with this technique, in which a polysilicon counter-mask is used instead of a double resist layer to perform the field oxide. The electrical characteristics of active and parasitic transistors, the leakage current measured on diodes with various perimeters and the channel width measurements are presented.
Keywords
Current measurement; Diodes; Electric variables measurement; Etching; Fabrication; Irrigation; Isolation technology; Resists; Resumes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436975
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