DocumentCode
514156
Title
A Novel Borosilicate Glass (SiOB-BSG) by Low Pressure Decomposition of a Monomolecular Liquid Precursor
Author
Treichel, H. ; Becker, F.S. ; Fuchs, D. ; Kruck, T.
Author_Institution
Siemens AG, Otto-Hahn-Ring 6, D-8000 Mÿnchen 83, F.R.G.
fYear
1988
fDate
13-16 Sept. 1988
Abstract
BSG with constant composition (ca. 4.7 wt% B) was deposited using Tris(trimethylsiloxy) boron B[OSi(CH3 )3] 3 in a standard LPCVD system. The optimum deposition conditions are 800 °C, 105 Pa (800 mTorr) and 280 sccm O2 purge. The films are chemically stable in atmosphere and exhibit good step coverage and low wet-etch rates. They are effective dopant sources in the 800-1000 °C range.
Keywords
Atmosphere; Boring; Boron; Chemical technology; Corrosion; Glass; Ion implantation; Lattices; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436977
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