A Novel Borosilicate Glass (SiOB-BSG) by Low Pressure Decomposition of a Monomolecular Liquid Precursor

BSG with constant composition (ca. 4.7 wt% B) was deposited using Tris(trimethylsiloxy) boron B[OSi(CH3)3] 3 in a standard LPCVD system. The optimum deposition conditions are 800 °C, 105 Pa (800 mTorr) and 280 sccm O2 purge. The films are chemically stable in atmosphere and exhibit good step coverage and low wet-etch rates. They are effective dopant sources in the 800-1000 °C range.