• DocumentCode
    514162
  • Title

    Position Resolved Carrier Lifetime Measurements in Silicon Power Devices by Time Resolved Photoluminescence Spectroscopy

  • Author

    Bohnert, G. ; HÄcker, R. ; Hangleiter, A.

  • Author_Institution
    4. Physikalisches Institut, Universitÿt Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, F. R. G.
  • fYear
    1988
  • fDate
    13-16 Sept. 1988
  • Abstract
    We present a new versatile method for measuring position resolved carrier lifetimes in semiconductor power devices, using time resolved photoluminescence spectroscopy. The experimental results obtained at ASCRs and silicon diodes are in good agreement to what is expected from the doping profile. In addition the effects of lifetime reducing processes, e.g. gold diffusion, e¿ - or H+ -irradiation can be clearly demonstrated. The resolution in position is only limited by carrier diffusion.
  • Keywords
    Charge carrier lifetime; Doping profiles; Gold; Photoluminescence; Position measurement; Power measurement; Semiconductor diodes; Silicon; Spectroscopy; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
  • Conference_Location
    Montpellier, France
  • Print_ISBN
    2868830994
  • Type

    conf

  • Filename
    5436986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514162