Title :
The Hot-Electron Problem in Submicron MOSFET
Author :
Hansch, W. ; Orlowski, M. ; Weber, W.
Author_Institution :
Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 M?nchen, F.R.G.
Abstract :
A review of the hot electron problem in MOSFET is given. This includes: Key experimental features, the problem of modelling hot carrier transport in Si and SiO2 after injection into the oxide, and an evaluation of technological measures to obtain hot carrier resistant structures.
Keywords :
Analytical models; Charge carrier processes; Circuit stability; Degradation; Electron traps; Hot carriers; MOSFET circuits; Microelectronics; Poisson equations; Research and development;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
