DocumentCode
514165
Title
Photovoltaic Infrared Sensor Array in Heteroepitaxial Narrow Gap Lead-Chalcogenides on Silicon
Author
Masek, J. ; Maissen, C. ; Zogg, H. ; Blunier, S. ; Weibel, H. ; Lambrecht, A. ; Spanger, B. ; Böttner, H. ; Tacke, M.
Author_Institution
AFIF (Industry Research Unit) at Swiss Federal Institute of Technology, ETH-Hönggerberg, CH-8093 Zÿrich, Switzerland
fYear
1988
fDate
13-16 Sept. 1988
Abstract
Linear arrays of photovoltaic IR-sensors for thermal imaging applications have been fabricated for the first time in narrow gap semiconductor layers grown heteroepitaxially on Si-substrates. Heteroepitaxy was achieved using intermediate stacked CaF2 -BaF2 bilayers to overcome the large lattice- and thermal expansion mismatch between Si and lead-chalcogenides. Sensors fabricated in narrow gap PbTe have ¿5.7 ¿m cut-off wavelength at 90K and quantum efficiencies around 70%. Resistance-area products are up to 500 ¿cm2 with mean value of ¿150 ¿cm2 for 66 element linear arrays, well above the room temperature photon background noise limit. Sensor arrays with shorter cut-off wavelength were fabricated in the same manner in epitaxial Pb1-x Eux Se on fluoride covered Si-substrates.
Keywords
Infrared sensors; Lead; Optical imaging; Optoelectronic and photonic sensors; Photovoltaic systems; Sensor arrays; Silicon; Solar power generation; Temperature sensors; Thermal expansion;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436990
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