Title :
On-Resistance in the ALDMOST
Author :
Nanz, G. ; Dickinger, P. ; Kausel, W. ; Selberherr, S.
Author_Institution :
Institut f??r Allgemeine Elektrotechnik und Elektronik, Technical University Vienna, Gusshausstrasse 27-29, A-1040 Vienna, Austria
Abstract :
Recently a new lateral power MOSFET named accumulation lateral DMOS transistor (ALDMOST) has been proposed. We have investigated the dependence of the ON-resistance of this type of device on the oxide thickness and the additional semi-insulating layer along the surface of the gate oxide above the drift region. This layer has been introduced in order to lower the high ON-resistance which is in general a disadvantage of this type of MOS transistors.
Keywords :
Current density; Dielectrics; Doping profiles; Electrons; Gaussian distribution; Geometry; MOSFET circuits; Power MOSFET; Solid modeling; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
